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Charged Nanoparticles during the Synthesis of GaN Nanostructures
According to the theory of charged nanoparticles (TCN) suggested by Hwang et al. (2004, 2010), charged nanoparticles (CNPs) are generated in the gas phase and become building blocks for thin films, nanowires, and other nanostructure in the chemical vapor deposition (CVD) process, which is drastically different from the previous belief that the building blocks for them are believed to be atoms or molecules. Motivated by these studies, the purpose of our work is to confirm whether CNPs are generated in the gas phase during the…
Fabrication of silicon thin-film solar cells by HWCVD
Thin films widely used solar cells and thin film transistors. In an effort to suppress the low temperature precipitation of silicon, we added HCl during HWCVD. The crystalline fraction of silicon films was shown to increase systemically with increasing HCl fraction. The crystalline silicon films almost free of amorphous incubation silicon could be deposited directly on a glass substrate by adding an appropriate amount of HCl. And we also improve electrical property of silicon delay time hot wire chemical vapor deposition. Th…
Silicon Thin Film Deposition by Hot Wire CVD
Growth of crystalline thin films has been a key issue in microelectronics, LCD, AMOLED, LED and solar cells. In order to deposit the crystalline Si film at low substrate temperature, our group have studied growth mechanism of Si films in HWCVD system. Our group suggested that the low temperature deposition of crystalline silicon during HWCVD is contributed by crystalline Si gas phase nuclei. To confirm the role of crystalline gas phase nuclei, We captured the hypothetical Si nanoparticles on a transmission electron microscop…
Silicon Thin Film Deposition by Thermal CVD
Crystal growth based on an atomic process is well established and described by the terrace, ledge and kink (TLK) model, where the atom adsorbs on a terrace, diffuses to a ledge and finally becomes incorporated in the crystal lattice at the kink. However, our group suggested a theory of charged nanoparticles (TCN), which says that most thin films and nanostructures prepared by CVD, which have been believed to grow by individual atoms or molecules, actually grow by charged nanoparticles. Based on the prediction by the TCN, we …
Silicon Nanostructures (Si-NSs)
Microstructure Evolution during Processing in Chemical Vapor Deposition

서울 관악구 관악로 1 서울대학교, 재료공학부 31동 314호 박막및미세조직실험실 (08826)
Thin Films and Microstructure Lab., 31-314 Department of Materials Science and Engineering, Seoul National Univ., 1 Gwanak-ro, Gwanak-gu, Seoul, Korea (Zip 08826)
TEL +82-2-880-9152 (31-314), +82-2-880-8862 (30-304), +82-2-880-5511 (131-404)

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