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Charged Nanoparticles during the Synthesis of GaN Nanostructures

According to the theory of charged nanoparticles (TCN) suggested by Hwang et al. (2004, 2010), charged nanoparticles (CNPs) are generated in the gas phase and become building blocks for thin films, nanowires, and other nanostructure in the chemical vapor deposition (CVD) process, which is drastically different from the previous belief that the building blocks for them are believed to be atoms or molecules.

Motivated by these studies, the purpose of our work is to confirm whether CNPs are generated in the gas phase during the synthesis of GaN nanostructures by atmospheric pressure CVD, using a differential mobility analyzer combined with Faraday cup electrometer (DMA-FCE), which was connected to a CVD reactor.

After this confirmation of generation of CNPs, we will try to control those CNPs so that we will be able to control the various GaN nanostructures during the CVD process.

Reference:

Charged clusters in thin film growth,

Hwang, N.M. , Kim, D.Y., Inter. Mater. Rev. 49 (2004) 171 Review Paper

Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition,

Hwang, N.-M., Lee, D.-K, J. Phys. D: Appl. Phys. 43 (2010) 483001 Review Paper


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